The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2007
Filed:
Nov. 12, 2004
Chun-hsiang Lai, Hsinchu, TW;
Shin Su, Hsinchu, TW;
Chia-ling LU, Hsinchu, TW;
Yen-hung Yeh, Hsinchu, TW;
Tao-cheng LU, Hsinchu, TW;
Chun-Hsiang Lai, Hsinchu, TW;
Shin Su, Hsinchu, TW;
Chia-Ling Lu, Hsinchu, TW;
Yen-Hung Yeh, Hsinchu, TW;
Tao-Cheng Lu, Hsinchu, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
An electrostatic discharge (ESD) protection circuit coupled to an input pad comprises a diode formed in a substrate and coupled to the input pad; a P deep well formed in the substrate; an N well formed in the P deep well; a first P+ doped region in the N well; and an NMOS transistor formed on the substrate, comprising a gate, a source and a drain, wherein the drain is formed in the N well and coupled to a Vcc, and the source is formed in the P deep well; and a second P+ doped region formed in the P deep well. The ESD protection circuit uses a smaller area than the conventional ESD protection circuit.