The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2007
Filed:
Mar. 08, 2005
Cheng-ku Chen, Hsinchu, TW;
Min-hwa Chi, Palo Alto, CA (US);
Cheng-Ku Chen, Hsinchu, TW;
Min-Hwa Chi, Palo Alto, CA (US);
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method for forming a dual damascene with improved profiles including providing a semiconductor process wafer including a dielectric insulating layer and an overlying hardmask layer; forming an uppermost layer of amorphous carbon substantially conformally over the hardmask layer; forming a trench line opening through at least the thickness of the amorphous carbon layer; forming a dual damascene opening comprising forming the trench line opening overlying a via opening pattern through a thickness of the hardmask layer and partially through a thickness of the dielectric insulating layer; and, filling the dual damascene opening with metal.