The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2007
Filed:
Aug. 15, 2003
Applicants:
Shigeru Umeno, Tokyo, JP;
Satoshi Murakami, Tokyo, JP;
Hirotaka Fujii, Tokyo, JP;
Inventors:
Assignee:
Sumitomo Mitsubishi Silicon Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
It is an object of the present invention to provide an epitaxial wafer with fewer pit defects in the epitaxial layer of a silicon monocrystalline wafer that has been doped with arsenic. Pit defects tend to occur when gas etching is performed prior to epitaxial film formation, but this tendency is reversed and a sound epitaxial layer is obtained by setting the crystal plane orientation to (100) and specifying the range of the tilt angle for the angle θ in the [001] direction or [00] direction or the angle φ in the [00] direction or [010] direction with respect to the [100] axis.