The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2007
Filed:
Jan. 31, 2006
Sakae Koyata, Tokyo, JP;
Yuichi Kakizono, Tokyo, JP;
Tomohiro Hashii, Tokyo, JP;
Katsuhiko Murayama, Tokyo, JP;
Sakae Koyata, Tokyo, JP;
Yuichi Kakizono, Tokyo, JP;
Tomohiro Hashii, Tokyo, JP;
Katsuhiko Murayama, Tokyo, JP;
Sumco Corporation, Tokyo, JP;
Abstract
A method for manufacturing a silicon wafer includes a planarizing processfor polishing or lapping the upperside and lowerside surfaces of a thin disk-shaped silicon wafer obtained by slicing a silicon single crystal ingot, an etching process for dipping the silicon wafer into the etching liquid wherein silica powder is dispersed uniformly in an alkali aqueous solution, thereby etching the upperside and lowerside surfaces of the silicon wafer, and a both-side simultaneous polishing processfor polishing the upperside and lowerside surfaces of the etched silicon wafer simultaneously or a one-side polishing process for polishing the upperside and lowerside surfaces of the etched silicon wafer one after another, in this order.