The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2007
Filed:
Aug. 31, 2005
Ji-hoon Park, Seoul, KR;
Seung-beom Yoon, Gyeonggi do, KR;
Jeong-uk Han, Gyeonggi-do, KR;
Seong-gyun Kim, Gyeonggi-do, KR;
Sung-taeg Kang, Seoul, KR;
Bo-young Seo, Gyeonggi-do, KR;
Sang-woo Kang, Seoul, KR;
Sung-woo Park, Gyeonggi-do, KR;
Ji-Hoon Park, Seoul, KR;
Seung-Beom Yoon, Gyeonggi do, KR;
Jeong-Uk Han, Gyeonggi-do, KR;
Seong-Gyun Kim, Gyeonggi-do, KR;
Sung-Taeg Kang, Seoul, KR;
Bo-Young Seo, Gyeonggi-do, KR;
Sang-Woo Kang, Seoul, KR;
Sung-Woo Park, Gyeonggi-do, KR;
Abstract
A flash memory device according to the present invention includes a semiconductor fin including a top surface and a side surface originated from different crystal planes. The flash memory device comprises: insulating layers having different thicknesses formed on a side surface and a top surface of the semiconductor fin, a storage electrode, a gate insulating layer and a control gate electrode sequentially formed on the insulating layers. A thin insulating layer enables charges to be injected or emitted through it, and a thick insulating layer increases a coupling ratio. Accordingly, it is possible to increase an efficiency of a programming or an erase operation of a flash memory device.