The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2007

Filed:

Apr. 02, 2004
Applicants:

Ivan Eliashevich, Maplewood, NJ (US);

Chris Bohler, North Royalton, OH (US);

Bryan S. Shelton, Bound Brook, NJ (US);

Hari S. Venugopalan, Somerset, NJ (US);

Xiang Gao, Edison, NJ (US);

Inventors:

Ivan Eliashevich, Maplewood, NJ (US);

Chris Bohler, North Royalton, OH (US);

Bryan S. Shelton, Bound Brook, NJ (US);

Hari S. Venugopalan, Somerset, NJ (US);

Xiang Gao, Edison, NJ (US);

Assignee:

Lumination, LLC, Valley View, OH (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A light emitting semiconductor device die () includes an electrically insulating substrate (). First and second spatially separated electrodes () are disposed on the electrically insulating substrate. The first and second electrodes define an electrical current flow direction directed from the first electrode to the second electrode. A plurality of light emitting diode mesas () are disposed on the substrate between the first and second spatially separated electrodes. Electrical series interconnections () are disposed on the substrate between neighboring light emitting diode mesas. Each series interconnection carries electrical current flow between the neighboring mesas in the electrical current flow direction.


Find Patent Forward Citations

Loading…