The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2007
Filed:
Apr. 06, 2004
Applicants:
Sang-bom Kang, Seoul, KR;
Gil-heyun Choi, Gyeonggi-do, KR;
Kwang-jin Moon, Gyeonggi-do, KR;
Hyun-su Kim, Gyeonggi-do, KR;
Seung-gil Yang, Gyeonggi-do, KR;
Inventors:
Sang-Bom Kang, Seoul, KR;
Gil-Heyun Choi, Gyeonggi-do, KR;
Kwang-Jin Moon, Gyeonggi-do, KR;
Hyun-Su Kim, Gyeonggi-do, KR;
Seung-Gil Yang, Gyeonggi-do, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods for depositing a metal layer on an integrated circuit device comprising providing a transition metal precursor, carrier gas and hydrogen gas to a deposition chamber such that the partial pressure of the precursor and carrier gas exceeds about 0.25 Torr and the partial pressure of hydrogen gas exceeds about 2.5 Torr are disclosed. Methods of forming a cobalt layer on an integrated circuit device are also disclosed.