Process for transfer of a thin layer formed in a substrate with vacancy clusters

Abstract

Processes for forming semiconductor structure comprising a transfer layer transferred from a donor substrate are provided in which the resulting structure has improved quality with respect to defects and resulting structures therefrom. For example, a semiconductor on insulator ('SeOI') structure can be formed using a donor substrate, a support substrate and an insulating layer. The donor substrate may be formed using CZ pulling of semiconductor material at a rate that results in the existence of vacancy clusters. An insulating layer for the SeOI structure can be formed by depositing an oxide layer on the donor or support substrate. An insulating layer can also be formed by thermal oxidizing the support substrate. An SeOI structure can be formed by combining the donor substrate, the support substrate, and the insulating layer there between, and detaching the combination including a thin layer of the donor substrate using a zone of weakness that was formed in the donor substrate. In some embodiments, the donor substrate is initially formed using a technique that results in lower COPs quality or density that if the donor substrate was formed from a Very Slow Pull, and after curing of the thin layer formed therefrom, results in a structure having COPs quality or density that is better than a near perfect crystalline structure.