The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2007
Filed:
Feb. 15, 2006
Yoichiro Tarui, Tokyo, JP;
Ken-ichi Ohtsuka, Tokyo, JP;
Masayuki Imaizumi, Tokyo, JP;
Hiroshi Sugimoto, Tokyo, JP;
Tetsuya Takami, Tokyo, JP;
Yoichiro Tarui, Tokyo, JP;
Ken-ichi Ohtsuka, Tokyo, JP;
Masayuki Imaizumi, Tokyo, JP;
Hiroshi Sugimoto, Tokyo, JP;
Tetsuya Takami, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device and its manufacturing method are provided in which the trade-off relation between channel resistance and JFET resistance, an obstacle to device miniaturization, is improved and the same mask is used to form a source region and a base region by ion implantation. In a vertical MOSFET that uses SiC, a source region and a base region are formed by ion implantation using the same tapered mask to give the base region a tapered shape. The taper angle of the tapered mask is set to 30° to 60° when the material of the tapered mask has the same range as SiC in ion implantation, and to 20° to 45° when the material of the tapered mask is SiO.