The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2007

Filed:

Mar. 18, 2004
Applicants:

Bryan C. Hendrix, Danbury, CT (US);

James J. Welch, New Fairfield, CT (US);

Steven M. Bilodeau, Oxford, CT (US);

Jeffrey F. Roeder, Brookfield, CT (US);

Chongying Xu, New Milford, CT (US);

Thomas H. Baum, New Fairfield, CT (US);

Inventors:

Bryan C. Hendrix, Danbury, CT (US);

James J. Welch, New Fairfield, CT (US);

Steven M. Bilodeau, Oxford, CT (US);

Jeffrey F. Roeder, Brookfield, CT (US);

Chongying Xu, New Milford, CT (US);

Thomas H. Baum, New Fairfield, CT (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.


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