The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2007
Filed:
Jun. 29, 2005
Applicants:
Hitesh Windlass, Hillsboro, OR (US);
Jonathan Lueker, Portland, OR (US);
Inventors:
Hitesh Windlass, Hillsboro, OR (US);
Jonathan Lueker, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
Abstract
The effects of a self-erase phenomenon when accessing imprinted ferroelectric memory cells that have non-conductive electrode interfaces that reduce remnant polarization and decrease signal margin are eliminated. A self-erase control pulse asserted after an access pulse is utilized. The self-erase control pulse has a magnitude sufficient to offset a remnant charge on the non-conductive electrode interfaces after the removal of the access pulse.