Vertical junction field effect transistors, and methods of producing the vertical junction field effect transistors

Abstract

A vertical JFETaccording to the present invention has an ntype drain semiconductor portion, an n-type drift semiconductor portion, a ptype gate semiconductor portion, an n-type channel semiconductor portion, an ntype source semiconductor portion, and a ptype gate semiconductor portion. The n-type drift semiconductor portionis placed on a principal surface of the ntype drain semiconductor portionand has first to fourth regionstoextending in a direction intersecting with the principal surface. The ptype gate semiconductor portionis placed on the first to third regionstoof the n-type drift semiconductor portion. The n-type channel semiconductor portionis placed along the ptype gate semiconductor portionand is electrically connected to the fourth regionof the n-type drift semiconductor portion