The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2007
Filed:
Jan. 25, 2005
Kazuhiro Harada, Tokyo, JP;
Norihito Fukatsu, Tokyo, JP;
Senlin Fu, Tokyo, JP;
Yoji Suzuki, Tokyo, JP;
Kazuhiro Harada, Tokyo, JP;
Norihito Fukatsu, Tokyo, JP;
Senlin Fu, Tokyo, JP;
Yoji Suzuki, Tokyo, JP;
Sumco Corporation, Tokyo, JP;
Abstract
[Problem] A silicon single crystal ingot in which point defect agglomerates do not exist over a substantially entire length thereof is manufactured without reducing a pure margin. [Solving Means] A heat shielding membercomprises a bulge portionwhich is provided to bulge in an in-cylinder direction at a lower portion of a cylindrical portionand has a heat storage memberprovided therein. A flow quantity of an inert gas flowing down between the bulge portionin the heat shielding memberand an ingotwhen pulling up a top-side ingotof the silicon single crystal ingotis set larger than a flow quantity of the inert gas flowing down between the bulge portionand the ingotwhen pulling up a bottom-side ingotof the silicon single crystal ingot, thereby pulling up the ingot. Alternatively, an intensity of a cusp magnetic fieldwhen pulling up the top-side ingotis set higher than an intensity of the cusp magnetic fieldwhen pulling up the bottom-side ingot