The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2007
Filed:
Dec. 16, 2003
Applicants:
Shang Wei Lin, Taipei, TW;
Hung Chang Hsieh, Hsin-Chu, TW;
Inventors:
Shang Wei Lin, Taipei, TW;
Hung Chang Hsieh, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method to prevent photoresist residues formed in an aperture is provided. The method includes using a halogen-containing plasma treatment before the aperture is filled with a photoresist. Due to the halogen-containing plasma treatment, amine components on the sidewalls of a via or contact hole or trench opening can be efficiently removed. Accordingly, photoresist residues or via poison can be avoided.