The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2007
Filed:
Feb. 25, 2005
Yi-cheng Chen, Mingjian Township, Nantou County, TW;
Earic Liu, Dongshih Township, Taichung County, TW;
Yu-kun Chen, Hsinchu, TW;
Gene LI, Jhubei, TW;
Yi-Cheng Chen, Mingjian Township, Nantou County, TW;
Earic Liu, Dongshih Township, Taichung County, TW;
Yu-Kun Chen, Hsinchu, TW;
Gene Li, Jhubei, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for fabricating an asymmetric semiconductor device is provided. A substrate formed with at least one base structure of MOSFET thereon is provided, wherein the base structure includes a gate over the substrate and a source extension and a drain extension in the substrate beside the gate. The base structure is then treated with an anisotropic annealing source inclined in the source-to-drain direction of the base structure relative to the normal of the substrate, such that one of the source and drain extensions is shadowed by the gate and the other is annealed more.