The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2007
Filed:
Apr. 11, 2005
Takahisa Ito, Kawasaki, JP;
Mitsuo Sakurai, Kawasaki, JP;
Naoyuki Ishiwata, Kawasaki, JP;
Yasuyuki Kushida, Kawasaki, JP;
Takahisa Ito, Kawasaki, JP;
Mitsuo Sakurai, Kawasaki, JP;
Naoyuki Ishiwata, Kawasaki, JP;
Yasuyuki Kushida, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A method for correcting pattern data is provided which is capable of making a proper correction to data of a pattern having a complicated layout. A correction is made to pattern data affected by a proximity effect when a pattern is formed on a photomask or wafer according to design data for a semiconductor device, by detecting, according to the design data, a space portion being placed on a photomask or wafer and having a specified size occurring between patterns facing each other in a first direction, by producing pattern data corresponding to an assist pattern that fills the space portion, by detecting an edge to be corrected in a position being opposite to an edge of the assist pattern extending in a second direction between the patterns facing each other, out of framing portions of the pattern being placed in parallel and near to the assist pattern, by making a correction being independent of a correction to be made to other edge of the framing portion to the detected edge to be corrected, and by removing the assist pattern.