The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2007
Filed:
Aug. 02, 2005
Kazuki Tateoka, Takatsuki, JP;
Katsushi Tara, Kyoto, JP;
Kaname Motoyoshi, Nishinomiya, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A transistor integrated circuit apparatus generating less noise, having superb RF characteristics, and preventing thermal runaway of transistors is provided. Owing to capacitors Cthrough Chaving one end commonly connected to an RF signal input terminal RFin and the other end connected to a base electrode of a corresponding transistor, and inductors Lthrough Lhaving one end commonly connected to a DC power supply input terminal DCin and the other end connected to a base electrode of a corresponding transistor, RF noise generated in a DC power supply circuit is reduced. This can reduce the RF noise output from the transistors Trthrough Tr. The inductors Lthrough Lprevent an RF signal input from the RF input terminal RFin from flowing toward the DC power supply circuit. This can prevent the RF signal from being lost by the flow thereof toward the DC power supply circuit.