The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 02, 2007

Filed:

Aug. 20, 2004
Applicants:

Masaru Kito, Yokohama, JP;

Masaru Kido, Kawasaki, JP;

Hideaki Aochi, Kawasaki, JP;

Toshiharu Tanaka, Yokohama, JP;

Ryota Katsumata, Yokohama, JP;

Hideki Inokuma, Yokohama, JP;

Yoichi Takegawa, Yokohama, JP;

Inventors:

Masaru Kito, Yokohama, JP;

Masaru Kido, Kawasaki, JP;

Hideaki Aochi, Kawasaki, JP;

Toshiharu Tanaka, Yokohama, JP;

Ryota Katsumata, Yokohama, JP;

Hideki Inokuma, Yokohama, JP;

Yoichi Takegawa, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/08 (2006.01); H01L 31/00 (2006.01); H01L 29/76 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a semiconductor substrate with a trench; a capacitor; a collar oxide film arranged on a portion of a side of the trench above the capacitor; a storage node arranged on a side of the collar oxide film in an upper portion of the trench and electrically connected to a storage electrode of the capacitor; a select transistor provided on a surface of the semiconductor substrate and having a source region in contact with the trench; a spacer covering a side of the source region; and a surface strap contact arranged upon the spacers, the source region and the storage node.


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