The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2007
Filed:
Apr. 22, 2002
Zvonimir Gabric, Zorneding, DE;
Walter Hartner, Bad Abbach-Peising, DE;
Matthias Krönke, Dresden, DE;
Günther Schindler, Munich, DE;
Zvonimir Gabric, Zorneding, DE;
Walter Hartner, Bad Abbach-Peising, DE;
Matthias Krönke, Dresden, DE;
Günther Schindler, Munich, DE;
Infineon Technologies AG, Munich, DE;
Abstract
The invention relates to a microelectronic structure which provides improved protection of a hydrogen-sensitive dielectric against hydrogen contamination. According to the invention, the hydrogen sensitive dielectric () is covered at lest by an intermediate oxide (), where material thickness is at lest five times the thickness of the hydrogen-sensitive dielectric. The intermediate oxide () simultaneously acts as an internal dielectric and is metabolized on its surface for this purpose. The intermediate oxide (), which has a sufficient thickness absorbers the hydrogen that may be released during the deposition of a hydrogen barrier layer (), thus protecting the hydrogen-sensitive dielectric ().