The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2007
Filed:
Oct. 12, 2004
Applicant:
Yi Ding, Sunnyvale, CA (US);
Inventor:
Yi Ding, Sunnyvale, CA (US);
Assignee:
ProMOS Technologies Inc., Hsin-Chu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a nonvolatile memory cell having at least two floating gates, each floating gate () has an upward protruding portion. This portion can be formed as a spacer over a sidewall of the select gate (). The spacer can be formed from a layer () deposited after the layer () which provides a lower portion of the floating gate. Alternatively, the upward protruding portion and the lower portion can be formed from the same layers or sub-layers all of which are present in both portions. The control gate () can be defined without photolithography. Other embodiments are also provided.