The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2007
Filed:
Jan. 19, 2005
Kazuo Ogawa, Tokyo, JP;
Kazuo Ogawa, Tokyo, JP;
Elpida Memory, Inc., Tokyo, JP;
Abstract
A semiconductor device having a trench element separation region is disclosed. A pad oxide film (), and a silicon nitride film () may be formed on a semiconductor substrate (). A trench () may be formed by dry etching using the silicon nitride film () as a mask. The silicon substrate () may be thermally oxidized using the silicon nitride film () as an oxidation mask and a modified layer may be formed on the surface of the silicon nitride film (). The modified layer may be removed by a neutral radical containing fluorine. The surface of the silicon nitride film () may be etched by a predetermined thickness. A filling insulation film may be deposited to completely fill the trench (). The insulation film may then be chemical mechanical polished using the silicon nitride film () as a polishing stopper to form a trench element separation insulation material ().