The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2007
Filed:
Jul. 07, 2005
Kei-yu Ko, Meridian, ID (US);
Kei-Yu Ko, Meridian, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Processes, etchants, and apparatus useful for etching an insulating oxide layer of a substrate without damaging underlying nitride features or field oxide regions. The processes exhibit good selectivity to both nitrides and field oxides. Integrated circuits produced utilizing etching processes of the present invention are much less likely to be defective due to photoresist mask misalignment. Etchants used in processes of the present invention comprise a carrier gas, one or more CF gases, CHF, and a gas selected from the group consisting of CHF, CF, and mixtures thereof. The processes can be performed at power levels lower than what is currently utilized in the prior art.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile