The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2007
Filed:
Jul. 26, 2006
Applicants:
Sugato Mukherjee, Boise, ID (US);
Yangsung Joo, Boise, ID (US);
Inventors:
Sugato Mukherjee, Boise, ID (US);
Yangsung Joo, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F 3/45 (2006.01);
U.S. Cl.
CPC ...
Abstract
A low voltage CMOS differential amplifier is provided. More specifically, in one embodiment, there is provided a method of manufacturing a device comprising coupling a fixed biased transistor in parallel to a self-biased transistor and configuring the fixed biased transistor and the self-biased transistor to provide a current to a differential amplifier, wherein the fixed biased transistor is configured to provide current to the differential amplifier when the self-biased transistor is operating in a triode or cut-off region.