The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2007
Filed:
Aug. 30, 2004
Wendell P. Noble, Milton, VT (US);
Leonard Forbes, Corvallis, OR (US);
Wendell P. Noble, Milton, VT (US);
Leonard Forbes, Corvallis, OR (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Structures are provided for multiple oxide thicknesses on a single silicon wafer. In particular, structures are provided for multiple gate oxide thicknesses on a single chip. The chip can include circuitry including but not limited to the memory and logic technologies. These structures for multiple oxide thickness on a single silicon wafer can be used in conjunction with existing fabrication and processing techniques with minimal or no added complexity. One structure includes a top layer of SiOon a top surface of a silicon wafer and a trench layer of SiOon a trench wall of the silicon wafer. The trench wall of the silicon wafer has a different order plane-orientation than the top surface. The thickness of the top layer is different from a thickness of the trench layer.