The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2007
Filed:
Dec. 21, 2004
Cheng-wen Fan, Hsin-Chu Hsien, TW;
Hua-chou Tseng, Hsin-Chu, TW;
Cheng-Wen Fan, Hsin-Chu Hsien, TW;
Hua-Chou Tseng, Hsin-Chu, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
The invention provides a heterojunction bipolar transistor comprising a substrate having a collector therein, an intrinsic base region, a first extrinsic base region, a second extrinsic base region, an emitter on the intrinsic base layer and a spacer adjacent the emitter and on the first extrinsic base region. The first extrinsic base region is adjacent the intrinsic base region and the second extrinsic base region is adjacent the first extrinsic base region on the substrate, wherein a dopant concentration of the second extrinsic base region is higher than a dopant concentration of the first extrinsic base region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile