The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 18, 2007

Filed:

Jun. 30, 2004
Applicants:

Richard Johannes Franciscus Van Haren, Waalre, NL;

Sanjaysingh Lalbahadoersing, Helmond, NL;

Henry Megens, Eindhoven, NL;

Inventors:
Assignee:

ASML Nertherlands B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a marker structure including line elements and trench elements arranged in a repetitive order includes filling the trench elements with silicon dioxide and leveling the marker structure. A sacrificial oxide layer is grown on the semiconductor surface, and a first subset of the line elements is exposed to an ion implantation beam including a dopant species to dope and change an etching rate of the first subset. The substrate is annealed to activate the dopant species, and the semiconductor surface is etched to remove the sacrificial oxide layer and to level the first subset to a first level and to create a topology such that the first subset has a first level differing from a second level of a surface portion of the marker structure different from the first subset.


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