The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2007
Filed:
Feb. 13, 2006
Applicants:
Wesley Lin, Jhubei, TW;
Fang-shi Jorcan Lai, Hsinchu, TW;
Inventors:
Wesley Lin, Jhubei, TW;
Fang-Shi Jorcan Lai, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/24 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention discloses a memory device with a leakage current reduction feature. The memory device includes at least one memory cell for storing a value, and at least one switch module coupled to the memory cell for generating an operating voltage at various levels depending on various operation modes of the memory cell. The operating voltage is at a first level when the memory cell is being accessed, and is at a second level lower than the first level when the memory cell is not being accessed, thereby reducing a leakage current for the memory cell.