The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2007
Filed:
Apr. 06, 2006
Applicants:
Chia-lin Chen, Jhubei, TW;
Ming-chen Chen, Hsin-chu, TW;
Inventors:
Chia-Lin Chen, Jhubei, TW;
Ming-Chen Chen, Hsin-chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method includes measuring a gate leakage current of at least one transistor. A single stress bias voltage is applied to the at least one transistor at a given temperature for a stress period t. The stress bias voltage causes a 10% degradation in a drive current of the transistor at the given temperature within the stress period t. A negative bias temperature instability (NBTI) lifetime τ of the transistor is estimated based on the measured gate leakage current and a relationship between drive current degradation and time observed during the applying step.