The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2007
Filed:
Sep. 06, 2006
Toshio Mochizuki, Tokyo, JP;
Eiki Imaizumi, Tokyo, JP;
Sachiko Okumura, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
The present invention provides a band gap type reference voltage generating circuit and a semiconductor integrated circuit having the same, capable of generating a reference voltage of about 1.2V or less whose temperature dependency is low, and realizing reduced offset voltage dependency of a differential amplifier. A band gap part has: a first resistor and a first bipolar transistor connected in series between power supply voltage terminals; a second resistor, a second bipolar transistor, and a third resistor connected in series between the power supply voltage terminals; and a differential amplifier that receives voltages generated by the first and second resistors, and an output of the differential amplifier is applied to the bases of the two transistors. The output part has a third bipolar transistor having a base to which the output of the differential amplifier is applied, a fourth resistor connected in series with the third bipolar transistor, a current mirror circuit for transferring current flowing in the third bipolar transistor, and a fifth resistor and a diode for converting the transferred current to voltage.