The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 11, 2007

Filed:

Nov. 07, 2005
Applicants:

Tsai-yuan Chien, Hsinchu, TW;

Liang-chuan Lai, Hsinchu County, TW;

Inventors:

Tsai-Yuan Chien, Hsinchu, TW;

Liang-Chuan Lai, Hsinchu County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating a semiconductor device is provided. Before covering the isolation structures with a conductive layer, a material layer is formed on the isolation structures. The fluid-like material layer allows the material layer formed between the isolation structures to be thicker than that formed on the top of the isolation structures. The isolation structures are then effectively etched back. The material layer at the top of the isolation structures is removed and a portion of isolation structures is also removed to lower the height of the isolation structures.


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