The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2007
Filed:
Nov. 28, 2005
Tsu-jae King, Fremont, CA (US);
Tsu-Jae King, Fremont, CA (US);
Synopsys, Inc., Mountain View, CA (US);
Abstract
A static random access memory (SRAM) cell includes a SRAM circuit and a programmable resistor connected to a storage node of the SRAM circuit. The SRAM circuit can be any type of SRAM circuit, such as a 3T, negative differential resistance (NDR) transistor-based circuit, or a 6T (conventional SRAM) circuit. The programmable resistor can be formed in a metal layer above the SRAM circuit to minimize the area requirements for the memory cell. Just before shutdown of the SRAM cell, the resistance state of the programmable resistor is changed (if necessary) based on the data value stored at the storage node. The programmable resistor provides a non-volatile indication of the stored data value at the time of power off. Then, when power is restored to the SRAM cell, a data value based on the resistance state of the programmable resistor is written back into the SRAM circuit.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile