The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2007
Filed:
Oct. 29, 2003
Andrew Graham, München, DE;
Franz Hofmann, München, DE;
Wolfgang Hönlein, Unterhaching, DE;
Johannes Kretz, München, DE;
Franz Kreupl, München, DE;
Erhard Landgraf, München, DE;
Richard Johannes Luyken, München, DE;
Wolfgang Rösner, Ottobrunn, DE;
Thomas Schulz, Austin, TX (US);
Michael Specht, München, DE;
Andrew Graham, München, DE;
Franz Hofmann, München, DE;
Wolfgang Hönlein, Unterhaching, DE;
Johannes Kretz, München, DE;
Franz Kreupl, München, DE;
Erhard Landgraf, München, DE;
Richard Johannes Luyken, München, DE;
Wolfgang Rösner, Ottobrunn, DE;
Thomas Schulz, Austin, TX (US);
Michael Specht, München, DE;
Infineon Technologies, Inc., Munich, DE;
Abstract
A nonvolatile memory cell, memory cell arrangement, and method for production of a nonvolatile memory cell is disclosed. The nonvolatile memory cell includes a vertical field-effect transistor (FET). The FET contains a nanoelement arranged as a channel region and an electrically insulating layer. The electrically insulating layer at least partially surrounds the nanoelement and acts as a charge storage layer and as a gate-insulating layer. The electrically insulating layer is arranged such that electrical charge carriers may be selectively introduced into or removed from the electrically insulating layer and the electrical conductivity characteristics of the nanoelement may be influenced by the electrical charge carriers introduced into the electrically insulating layer.