The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2007
Filed:
Oct. 08, 2003
Applicant:
Suguru Tabara, Hamamatsu, JP;
Inventor:
Suguru Tabara, Hamamatsu, JP;
Assignee:
ROHM Co., Ltd., Kyoto, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a semiconductor device comprises, in patterning of a conductive film having a grain boundary on a very thin dielectric film, a first etching step of carrying out anisotropic etching until most of the conductive film in a flat portion disappears, and a second etching step of increasing a selective ratio to the dielectric film to etch the conductive film in an unnecessary portion such that a thickness of the dielectric film provided under the grain boundary can be held to prevent oxidation species from reaching an interface with a substrate after the first etching step.