The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2007
Filed:
Mar. 23, 2005
Katsuya Ito, Mie, JP;
Hiroaki Tsunoda, Mie, JP;
Takanori Matsumoto, Mie, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method of fabricating a semiconductor device, includes depositing, on a semiconductor substrate, a gate insulating film, a polycrystalline or amorphous silicon film, a silicon nitride film and a silicon oxide film sequentially, patterning a resist for forming a plurality of trenches on an upper surface of the substrate so as to have opening widths differing from each other, etching the silicon oxide film and the silicon nitride film formed on the substrate by an reactive ion etching (RIE) process with the resist serving as a mask, and etching the polycrystalline or amorphous silicon film, the gate insulating film and the substrate by the RIE process with the etched silicon oxide film and silicon nitride film serving as a mask using reactive plasma including a halogen gas, fluorocarbon gas, Ar and O2, thereby simultaneously forming the trenches with opening widths differing from each other.