The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2007
Filed:
Apr. 01, 2004
Rakesh Roshan, Oxford, GB;
Brendan Poole, Oxford, GB;
Stewart Edward Hooper, Oxfordshire, GB;
Jonathan Heffernan, Oxford, GB;
Rakesh Roshan, Oxford, GB;
Brendan Poole, Oxford, GB;
Stewart Edward Hooper, Oxfordshire, GB;
Jonathan Heffernan, Oxford, GB;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor device comprises an active region (), a cladding layer (), and a saturable absorbing layer () disposed within the cladding layer. The saturable absorbing layer comprises at least one portion () that is absorbing for light emitted by the active region and comprises at least portion () that is not absorbing for light emitted by the active region. The fabrication method of the invention enables the non-absorbing portion(s) () of the saturable absorbing layer () to produced after the device structure has been fabricated. This allows the degree of overlap between the non-absorbing portion(s) () of the saturable absorbing layer () and the optical mode of the laser to be altered after the device has been grown.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile