The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2007
Filed:
Jul. 06, 2005
Applicants:
Yoshihisa Abe, Hadano, JP;
Shunichi Suzuki, Hadano, JP;
Hideo Nakanishi, Hadano, JP;
Jun Komiyama, Hadano, JP;
Inventors:
Yoshihisa Abe, Hadano, JP;
Shunichi Suzuki, Hadano, JP;
Hideo Nakanishi, Hadano, JP;
Jun Komiyama, Hadano, JP;
Assignee:
Covalent Materials Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/30 (2006.01); H01L 29/04 (2006.01); H01L 31/036 (2006.01);
U.S. Cl.
CPC ...
Abstract
A substratefor growing an electro-optical single crystal thin film in which two or more layers of buffer layers, andfor buffering lattice mismatch between Si and BTO are formed on an Si (001) substrateis provided as a substrate for growing an electro-optical single crystal thin film which can obtain an electro-optical single crystal thin film of BTO single crystal thin filmetc. with a large size and a very high quality.