The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2007
Filed:
Mar. 31, 2004
Panya Wongsenakhum, Fremont, CA (US);
Aaron R. Fellis, Sunnyvale, CA (US);
Kaihan A. Ashtiani, Sunnyvale, CA (US);
Karl B. Levy, Los Altos, CA (US);
Juwen Gao, Fremont, CA (US);
Joshua Collins, Sunnyvale, CA (US);
Junghwan Sung, Los Altos, CA (US);
Lana Hiului Chan, Santa Clara, CA (US);
Panya Wongsenakhum, Fremont, CA (US);
Aaron R. Fellis, Sunnyvale, CA (US);
Kaihan A. Ashtiani, Sunnyvale, CA (US);
Karl B. Levy, Los Altos, CA (US);
Juwen Gao, Fremont, CA (US);
Joshua Collins, Sunnyvale, CA (US);
Junghwan Sung, Los Altos, CA (US);
Lana Hiului Chan, Santa Clara, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
Methods and apparatus for preparing a low-resistivity tungsten film on a substrate are provided. Methods involve the formation of a tungsten nucleation layer on a substrate using pulsed nucleation layer (PNL) techniques and depositing a bulk tungsten layer thereon. Methods for forming the tungsten nucleation layer involve the use of a boron-containing species, a tungsten-containing precursor, and optionally, a silane. The methods described are particularly useful for applications where thin, low resistivity films are desired, such as interconnect applications.