The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2007
Filed:
Apr. 10, 2006
Kaushal K. Singh, Santa Clara, CA (US);
David Carlson, San Jose, CA (US);
Manish Hemkar, Sunnyvale, CA (US);
Satheesh Kuppurao, San Jose, CA (US);
Randhir Thakur, San Jose, CA (US);
Kaushal K. Singh, Santa Clara, CA (US);
David Carlson, San Jose, CA (US);
Manish Hemkar, Sunnyvale, CA (US);
Satheesh Kuppurao, San Jose, CA (US);
Randhir Thakur, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.