The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2007
Filed:
Apr. 01, 2005
Tetsuya Yamaguchi, Tokyo, JP;
Hiroshige Goto, Yokohama, JP;
Masayuki Ayabe, Yokohama, JP;
Hisanori Ihara, Yokohama, JP;
Tetsuya Yamaguchi, Tokyo, JP;
Hiroshige Goto, Yokohama, JP;
Masayuki Ayabe, Yokohama, JP;
Hisanori Ihara, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A solid state imaging device includes a substrate of a first conductivity type. A transistor, which includes a first gate electrode and a first and second impurity areas, is provided on a surface of the substrate. The first and second impurity areas are formed in the surface of the substrate and sandwich a region under the first gate electrode. A third impurity area of a second conductivity type is formed in the surface of the substrate and spaced from the second impurity area at an opposite side to the first gate electrode. A fourth impurity area is formed under the second impurity area and connected to the third impurity area. A second gate electrode is provided above the substrate. A fifth impurity area of the second conductivity type is formed in the surface of the substrate. The third and fifth impurity areas sandwich a region under the second gate electrode.