The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2007
Filed:
Sep. 22, 2003
Hideomi Koinuma, Tokyo, JP;
Jeong-hwan Song, Tokyo, JP;
Toyohiro Chikyo, Tsukuba, JP;
Young Zo Yoo, Tsukuba, JP;
Parhat Ahmet, Tsukuba, JP;
Yoshinori Konishi, Yokosuka, JP;
Yoshiyuki Yonezawa, Yokosuka, JP;
Hideomi Koinuma, Tokyo, JP;
Jeong-Hwan Song, Tokyo, JP;
Toyohiro Chikyo, Tsukuba, JP;
Young Zo Yoo, Tsukuba, JP;
Parhat Ahmet, Tsukuba, JP;
Yoshinori Konishi, Yokosuka, JP;
Yoshiyuki Yonezawa, Yokosuka, JP;
Tokyo Institute of Technology, Tokyo, JP;
Abstract
A thin film device includes a metal sulfide layer formed on a single crystal silicon substrate by epitaxial growth; and a compound thin film with ionic bonding, which is formed on the metal sulfide layer by epitaxial growth. Alternatively, a thin film device includes a metal sulfide layer formed on a single crystal silicon substrate by epitaxial growth; and at least two compound thin films with ionic bonding, which are formed on the metal sulfide layer by epitaxial growth. For example, (110) surface AlN/MnS/Si (100) thin films formed by successively stacking a MnS layer (about 50 nm thick) and an AlN layer (about 1000 nm thick) on a single crystal Si (100) substrate, are used as a substrate, and a (110) surface GaN layer (about 100 nm thick) operating as a light emitting layer is formed on the substrate, thereby fabricating a thin film device.