The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2007
Filed:
Jan. 26, 2005
Mark S. Korber, Boise, ID (US);
Mark S. Korber, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods of forming integrated circuit devices are provided. A first mask layer is formed overlying a first portion of a semiconductor substrate. The first mask layer further overlies a second mask layer overlying a second portion of the semiconductor substrate. The first mask layer overlying the first portion of the semiconductor substrate is patterned to define areas for removal of one or more layers of material interposed between the semiconductor substrate and the first mask layer. Portions of the one or more layers of material exposed by the patterned first mask layer are removed to define elements of the integrated circuit device overlying the first portion of the semiconductor substrate.