The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2007
Filed:
May. 05, 2005
Deok Sin Kil, Kyoungki-do, KR;
Ki Seon Park, Kyoungki-do, KR;
Jae Sung Roh, Kyoungki-do, KR;
Hyun Chul Sohn, Seoul, KR;
Deok Sin Kil, Kyoungki-do, KR;
Ki Seon Park, Kyoungki-do, KR;
Jae Sung Roh, Kyoungki-do, KR;
Hyun Chul Sohn, Seoul, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
Disclosed is a method for forming a capacitor of a semiconductor device, which can improve a leakage current characteristic in applying HfxAlyOz as a dielectric film. In such a method, HfxAlyOz thin films are deposited on a storage electrode to form an HfxAlyOz dielectric film and a plate electrode is formed on the dielectric film. The HfxAlyOz dielectric film consists of laminated HfxAlyOz thin films which are different in compositions of Hf and Al such that the lower HfxAlyOz thin film adjoining the storage electrode has a larger composition ratio of Al than that of Hf and the upper HfxAlyOz thin film has a larger composition ratio of Hf than that of Al, and the upper HfxAlyOz thin film is subjected to heat treatment under an oxygen atmosphere after its deposition.