The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2007
Filed:
Dec. 13, 2004
Lisa Pfefferle, Branford, CT (US);
Dragos Ciuparu, New Haven, CT (US);
Jung Han, Woodbridge, CT (US);
Gary Haller, New Haven, CT (US);
Lisa Pfefferle, Branford, CT (US);
Dragos Ciuparu, New Haven, CT (US);
Jung Han, Woodbridge, CT (US);
Gary Haller, New Haven, CT (US);
Yale University, New Haven, CT (US);
Abstract
A transition metal substituted, amorphous mesoporous silica framework with a high degree of structural order and a narrow pore diameter distribution (±0.15 nm FWHM) was synthesized and used for the templated growth of GaN nanostructures, such as single wall nanotubes, nanopipes and nanowires. The physical properties of the GaN nanostructures (diameter, diameter distribution, electronic characteristic) can be controlled by the template pore diameter and the pore wall chemistry. GaN nanostructures can find applications, for example, in nanoscale electronic devices, such as field-emitters, and in chemical sensors.