The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7257023 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 14, 2007

Filed:

Aug. 10, 2005
Applicants:

Yue-der Chih, Hsin-Chu, TW;

Chin-huang Wang, Ping-Chen, TW;

Inventors:

Yue-Der Chih, Hsin-Chu, TW;

Chin-Huang Wang, Ping-Chen, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention discloses a memory device that includes a first memory cell array for storing one or more codes; a second memory cell array for storing one or more data, which are updated substantially more frequently than the codes; and a third memory cell array for storing address mapping information that indicates one or more locations of one or more memory cells in the second memory cell array. The second memory cell array endures substantially more programming cycles than the first memory cell array does.


Find Patent Forward Citations

Chih, Yue-Der. (2007). Hybrid non-volatile memory device (U.S. Patent No. 7257023). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7257023

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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