The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2007
Filed:
Sep. 07, 2005
Sadaaki Masuoka, Kawasaki, JP;
Sadaaki Masuoka, Kawasaki, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
The present invention is to provide a high-quality semiconductor device allowing independent control of threshold voltage values of gate electrodes of transistors which reside in a plurality of one-conductivity-type regions and in a reverse-conductivity-type region. The semiconductor comprises a P-type Si substrate, a plurality of P-type wellsconnected to each other via the bottom surface side of the P-type Si substrate, and an N-type wellprovided so as to surround side portions of the plurality of P-type wells. The semiconductor device also has NMOS transistorsprovided on the P-type wells, and PMOS transistorsprovided on the N-type well. The semiconductor device still also has an N-type wellprovided just under the N-type welland connected therewith.