The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 14, 2007

Filed:

Mar. 01, 2006
Applicants:

Yong-suk Choi, Seoul, KR;

Seung-beom Yoon, Suwon-si, KR;

Seong-gyun Kim, Seongnam-si, KR;

Inventors:

Yong-suk Choi, Seoul, KR;

Seung-beom Yoon, Suwon-si, KR;

Seong-gyun Kim, Seongnam-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided are a local SONOS-type memory device and a method of manufacturing the same. The device includes a gate oxide layer formed on a silicon substrate; a conductive spacer and a dummy spacer, which are formed on the gate oxide layer and separated apart from each other, the conductive spacer and the dummy spacer having round surfaces that face outward; a pair of insulating spacers formed on a sidewall of the conductive spacer and a sidewall of the dummy spacer which face each other; an ONO layer formed in a self-aligned manner between the pair of insulating spacers; a conductive layer formed on the ONO layer in a self-aligned manner between the pair of insulating spacers; and source and drain regions formed in the silicon substrate outside the conductive spacer and the dummy spacer.


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