The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2007
Filed:
Dec. 23, 2004
Applicants:
Isao Ohbu, Sagamihara, JP;
Chushiro Kusano, Niza, JP;
Yasunari Umemoto, Sayama, JP;
Atsushi Kurokawa, Takasaki, JP;
Inventors:
Isao Ohbu, Sagamihara, JP;
Chushiro Kusano, Niza, JP;
Yasunari Umemoto, Sayama, JP;
Atsushi Kurokawa, Takasaki, JP;
Assignee:
Renesas Technology Corp., Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/737 (2006.01);
U.S. Cl.
CPC ...
Abstract
A heterojunction bipolar transistor with InGaP as the emitter layer and capable of both reliable electrical conduction and thermal stability wherein a GaAs layer is inserted between the InGaP emitter layer and AlGaAs ballast resistance layer, to prevent holes reverse-injected from the base layer from diffusing and reaching the AlGaAs ballast resistance layer.