The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2007
Filed:
Apr. 30, 2004
Applicant:
Alessandro Spandre, Pavia, IT;
Inventor:
Alessandro Spandre, Pavia, IT;
Assignees:
STMicroelectronics S.r.l., Agrate Brianza, IT;
OVONYX, Inc., Boise, ID (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
A process for defining a chalcogenide material layer using a chlorine based plasma and a mask, wherein the portions of the chalcogenide material layer that are not covered by the mask are etched away. In a phase change memory cell having a stack of a chalcogenide material layer and an AlCu layer, the AlCu layer is etched first using a chlorine based plasma at a higher temperature; then the lateral walls of the AlCu layer are passivated; and then the chalcogenide material layer is etched at a lower temperature.