The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2007
Filed:
Dec. 28, 2004
Applicants:
Jung-chin Tsao, Taipei, TW;
Chi-wen Liu, Hsinchu, TW;
Hsien-ping Feng, Yonghe, TW;
Hsi-kuei Cheng, Jhubei, TW;
Steven Lin, Shih-Chu, TW;
Min-yuan Cheng, Taipei, TW;
Inventors:
Jung-Chin Tsao, Taipei, TW;
Chi-Wen Liu, Hsinchu, TW;
Hsien-Ping Feng, Yonghe, TW;
Hsi-Kuei Cheng, Jhubei, TW;
Steven Lin, Shih-Chu, TW;
Min-Yuan Cheng, Taipei, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a metal layer with reduced defects comprising providing a structure having a dielectric layer formed over it, forming a dielectric layer having an opening, lining the opening with a metal seed layer, treating the metal seed layer with a cleaning process to remove contaminates from it, and forming a metal layer upon the metal seed layer.