The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2007
Filed:
Sep. 10, 2002
Ryoji Kosugi, Ibaraki, JP;
Kenji Fukuda, Ibaraki, JP;
Junji Senzaki, Ibaraki, JP;
Mitsuo Okamoto, Ibaraki, JP;
Shinsuke Harada, Ibaraki, JP;
Seiji Suzuki, Osaka, JP;
Ryoji Kosugi, Ibaraki, JP;
Kenji Fukuda, Ibaraki, JP;
Junji Senzaki, Ibaraki, JP;
Mitsuo Okamoto, Ibaraki, JP;
Shinsuke Harada, Ibaraki, JP;
Seiji Suzuki, Osaka, JP;
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Sanyo Electric Co., Ltd., Moriguchi-shi, JP;
Abstract
A method of manufacturing a semiconductor device that provides a semiconductor device having improved channel mobility includes a process of forming a gate insulation film of silicon oxide film, silicon nitride film or silicon oxide nitride film or the like on a silicon oxide substrate, and following formation of the gate insulation film on the silicon oxide substrate with heat treatment for a given time at a temperature range of 900° C. to 1000° C. in an atmosphere containing not less than 25% HO (water).